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INTEGRATED CIRCUITS
SA2420 Low voltage RF transceiver -- 2.45GHz
Product specification 1997 May 23
Philips Semiconductors
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
DESCRIPTION
The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed for high-performance low-power communication systems for 2.4-2.5GHz applications. The LNA has a 2.5dB noise figure at 2.45GHz with 14dB gain and an IP3 intercept of -3dBm at the input. The gain is stabilized by on-chip compensation to vary less than 0.2dB over the -40 to +85C temperature range. The wide-dynamic-range receive mixer has a 10.9dB noise figure and an input IP3 of +2.8dBm at 2.45GHz. The nominal current drawn from a single 3V supply is 37mA in transmit mode and 22mA in receive mode.
PIN CONFIGURATION
DH Package
GND LNA IN GND GND Rx IF OUT Rx IF OUT Tx IF IN Tx IF IN GND LOP LO SW LOM 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 LNA OUT 22 GND 21 ATTEN SW 20 GND 19 RF IN/OUT 18 GND 17 Tx/Rx SW 16 GND 15 GND 14 VCC LO 13 CHIP EN
FEATURES
* Low current consumption: 37mA nominal transmit mode and
22mA nominal receive mode
* Fabricated on a high volume, rugged BiCMOS technology * High system power gain: 22.5dB (LNA + Mixer) at 2.45GHz * TSSOP24 package * Excellent gain stability versus temperature and supply voltage * -10dBm LO input power can be used to drive the mixer * Operates with either full or half frequency LO * Wide IF range: 50-500MHz
ORDERING INFORMATION
DESCRIPTION
SR00164
Figure 1. Pin Configuration
APPLICATIONS
* 2.45GHz WLAN front-end (802.11, ISM)
TEMPERATURE RANGE -40 to +85C
ORDER CODE SA2420DH
DWG # SOT355-1
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)
BLOCK DIAGRAM
VCC LNA OUT GND ATTEN SW GND RF IN/ OUT GND Tx/Rx SW GND GND VCC LO CHIP EN
24
23
22
21
20
19
18
TX
17
16
15
14
13
PRE-DRIVER
BPF ATTENUATOR LNA RX
BPF FREQ. DBLER
RX
TX
BUFFER
X1
X2
1
GND
2
LNA IN
3
GND
4
GND
5
Rx IF OUT
6
Rx IF OUT
7
Tx IF IN
8
Tx IF IN
9
GND
10
LOP
11
LO SW
12
LOM
SR00165
Figure 2. SA2420 Block Diagram
1997 May 23
2
853-1984 18069
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage Voltage applied to any pin Power dissipation, TA = 25C (still air) 24-Pin Plastic TSSOP Maximum operating junction temperature Maximum power (RF/IF/LO pins) Storage temperature range PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) 555 150 +20 -65 to +150 UNITS V V mW C dBm C
NOTE: 1. Transients exceeding these conditions may damage the product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may impact product reliability JA: 24-Pin TSSOP = 117C/W 3. IC is protected for ESD voltages for 2000V, excepts pins 10 and 12, which are protected up to 500V.
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V C C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; unless otherwise stated. LIMITS SYMBOL ICCTX ICCRX ICC OFF VLNA-IN ILNA-OUT VLO 2.1 GHz VLO 1.05 GHz VTX IF VTX IFB PARAMETER Supply current, Transmit Supply current, Receive Power down mode (Tx/Rx SW = Low) LNA input voltage LNA output bias current LO buffer DC input voltage LO buffer DC input voltage Tx Mixer input voltage Tx Mixer input voltage TEST CONDITIONS LO mode = Hi LO mode = Hi LO mode = Hi, LNA gain = Hi Receive mode Receive mode LO mode = Hi LO mode = Low Transmit mode Transmit mode MIN 25 15 -4 TYP 37 22 0 0.855 4.0 2.1 2.1 1.7 1.7 +4 MAX 45 28 10 UNITS mA mA A V mA V V V V
1997 May 23
3
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; LOIN = -10dBm @ 2.1GHz; fRF = 2.45GHz; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN -4 TYP +4 MAX UNITS
Low Noise Amplifier (In = Pin 2; Out = 23) S21 S21/T S21/VCC S12 S11 S22 ISO P-1dB IP3 NF Amplifier gain Gain temperature sensitivity Gain VCC drift Amplifier reverse isolation Amplifier input match1 Amplifier output match1 LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi LO mode = Hi, LNA gain = Hi LNA gain = Hi f1 - f2 = 1MHz, LNA gain = Hi LNA gain = Hi 2.3 12.7 14.0 -0.002 0.3 -22 -8 -8 -45 -15 -3 2.5 2.7 15.3 dB dB/C dB/V dB dB dB dB dBm dBm dB
Isolation: LO1 to LNAIN Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure (50)
LNA High Overload Mode S21 S21/T S21/VCC S12 S11 S22 ISO P-1dB IP3 NF Amplifier gain Gain temperature sensitivity Gain VCC drift Amplifier reverse isolation Amplifier input match1 Amplifier output match1 LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low LO mode = Hi, LNA gain = Low LNA gain = Low f1 - f2 = 1MHz, LNA gain = Low LNA gain = Low -14.0 -13.3 -0.01 0.3 -16 -8 -8 -45 +6 17 17 -12.0 dB dB/C dB/V dB dB dB dB dBm dBm dB
Isolation: LO1 to LNAIN Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure (50)
Rx Mixer (RF = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = -10dBm) PGC GC/T GC/VCC S11-RF NFM P-1dB IP3 fRF fIF Power conversion gain into 50 : matched to 50W using external balun circuitry. Gain temperature drift Gain VCC drift Input match at RF (2.45GHz)1 SSB noise figure (2.45GHz) (50) Mixer input 1dB gain compression Input third order intercept RF frequency range3 f1 - f2 = 1MHz 2.4 300 10.2 -11.4 1.7 fS = 2.45GHz, fLO = 2.1GHz, fIF = 350MHz 7.9 8.5 -0.016 0.34 -15 10.9 -10.3 2.8 2.45 350 11.6 -9.2 3.9 2.5 400 9.1 dB dB/C dB/V dB dB dBm dBm GHz MHz
IF frequency range3
1997 May 23
4
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
AC ELECTRICAL CHARACTERISTICS (continued)
LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN -4 TYP +4 MAX UNITS
Rx Mixer Spurious Components (PIN = P-1dB) PRF-IF PLO-IF RF feedthrough to IF LO feedthrough to IF CL = 2pF per side CL = 2pF per side -35 -35 dBc dBc
Tx Mixer (RF = Pin 19, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = -10dBm) PGC GC/T GC/VCC S11-RF NFM P-1dB IP3 fRF fIF Power conversion gain: RL = 50 RS = 50 Gain temperature drift Gain voltage drift Output match at RF (2.45GHz)1 fS = 2.45GHz, fLO = 2.1GHz, fIF = 350MHz 15.0 17 -0.032 0.4 -10 13.2 1.5 f1 - f2 = 1MHz 2.4 300 10.1 2.9 +11.5 2.45 350 4.3 12.9 2.5 400 19.9 dB dB/C dB/V dB dB dBm dBm GHz MHz
SSB noise figure (2.45GHz) (50) Output 1dB gain compression Output third order intercept RF frequency range3 IF frequency range3
Tx Mixer Spurious Components (POUT = P-1dB) PIF-RF PLO-RF P2LO-RF PIMAGE-RF IF feedthrough to RF LO feedthrough to RF 2*LO feedthrough to RF Image feedthrough to RF -29 -20 -25 -0 dBc dBc dBc dBc
LO Buffer: Full and Half Frequency inputs PLO S11-LO1 S11-LO2 fLO2G fLO1G Switching2 tRx-Tx tTx-Rx tPOWER UP tPWR DWN Receive-to-transmit switching time Transmit-to-Receive switching time Chip enable time Chip disable time 1 1 1 1 s s s s LO drive level (see figure 16) Mixer input match (LO = 2.1GHz) Mixer input match (LO = 1.05GHz) LO2G frequency LO1G frequency range3 range3 LO mode = Hi LO mode = Low LO mode = Hi LO mode = Low 1.9 0.85 -10 -7 -10 -10 2.1 1.05 2.3 1.25 5 dBm dB dB GHz GHz
NOTES: 1. With simple external matching 2. With 50pF coupling capacitors on all RF and IF parts 3. This part has been optimized for the frequency range at 2.4-2.5 GHz. Operation outside this frequency range may yield performance other than specified in this datasheet.
1997 May 23
5
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
Table 1. Truth Table
Chip-En 0 1 1 1 1 1 1 TxRx-SW X 0 0 0 0 1 1 LNA-SW X 1 0 1 0 X X LO-SW X 1 1 0 0 1 0 Sleep Receive Receive Receive Receive Transmit Transmit Mode LNA Gain N/S +14dB -8dB +14dB -8dB N/S N/S LO Freq. (Typ) N/S 2.1GHz 2.1GHz 1.05GHz 1.05GHz 2.1GHz 1.05GHz
FUNCTIONAL DESCRIPTION
The SA2420 is a 2.45GHz transceiver front-end available in the TSSOP-24 package. This integrated circuit (IC) consists of a low noise amplifier (LNA) and up- and down-converters. The injection of the local oscillator (LO) signal has two options: 1) direct injection of the LO signal at approximately 2GHz, or 2) injection of an LO signal at approximately 1GHz through an on-chip doubler. The SA2420 functions with a supply voltage range of 3 - 5 V (nominally). There is an enable/disable switch available to power up/down the entire chip in 1s, typically. This transceiver has several unique features. The LNA has two operating modes: 1) high gain mode with a gain = +14dB; and 2) low gain mode with a gain <-10dB. The switch for this option is internal and is controlled externally by high and low logic to the pin. When the LNA is switched into the attenuation mode, active matching circuitry (on-chip) is switched in (reducing the number of off-chip components required). To reduce power consumption when the chip is transmitting, the LNA is automatically switched into a "sleep" mode (internally) without the use of external circuitry. The up and down frequency converters are single-ended at the RF port of the mixers. The up and down converters share the same
(RF) pin and use an internal switch for transmitting (up-converting) or receiving (down-converting) modes. The switch is controlled externally by high and low logic states. The RF port is matched to 50 and has an input IP3 of +2.8dBm (mixer only). The down-convert mixer is buffered and has open collectors at the pins to allow for matching to common SAW filters. The up-convert mixer has differential inputs (IF port) and single-ended output (RF port), with an input pin to output pin gain of 17dB. The output of the up-converter is designed for a power level = +3dBm (P-1dB). The mixers are fed by the two LO options. The available LO options are: direct injection (2.1GHz at the pin) or through an on-chip doubler. The doubler has a simple LC bandpass filter (internal) at its output which passes the second harmonic to the mixers. Through an internal switch (controlled externally), either LO can be used depending on the designer's application. If an application requires the use of a 1.05GHz VCO, then the doubler option would be used to double the frequency (2 x 1.05GHz = 2.1GHz) before being injected into the mixers. For a 2.1GHz VCO, the direct option would be used. With this option, the signal passes through an on-chip buffer and is then injected into the mixers.
1997 May 23
6
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
50 Vcc = 3V RX TX
3.0 Vcc = 3V 2.8
14.8
14.4
40 NOISE FIGURE (dB) CURRENT (mA)
30
2.4 NF GAIN 2.2
13.6
20
13.2
10 -50
2.0 0 TEMPERATURE (C) 50 100 -50 0 50 TEMPERATURE (C) 100
12.8
SR01458
SR01460
Figure 3. Rx & Tx Currents VS Temperature
Figure 5. LNA Gain & 50W NF VS Temperature
50 T = 25C
3.0
Vcc = 3V
14.8 NF GAIN
40 NOISE FIGURE (dB) CURRENT (mA)
2.8
14.4
30
2.4
13.6
20 2.2 13.2
10 2 3 4 VOLTS (V) 5 6
2.0 2.400
12.8 2.425 2.450 FREQUENCY (GHz) 2.475 2.500
SR01459
SR01461
Figure 4. Rx & Tx Currents VS Voltage Supply
Figure 6. LNA Gain & 50W NF VS Frequency
1997 May 23
7
GAIN (dB)
RX TX
2.6
14.0
GAIN (dB)
2.6
14.0
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
3.0 T = 25C 2.8
18 INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
0 T = 25C
17
-5 P-1dB IP3 -10
NOISE FIGURE (dB)
2.4 NF GAIN 2.2
15
GAIN (dB)
2.6
16
-15
14
2.0
2
3
4 VOLTS (V)
13 5 6
-20 2 3 4 VOLTS (V) 5 6
SR01462
SR01464
Figure 7. LNA Gain & 50W NF VS Supply Voltage
Figure 9. LNA Input IP3 and P-1dB VS Supply Voltage
-12.0
-12.4 LOSS S12 S21 LOSS (dB)
-23.8
Input IP3 and 1 dB Gain compression (dBm)
T = 25C Vcc = 3V
-23.0
0
-5 P-1dB IP3 -10
-13.2
-25.4
S12(dB)
-12.8
-24.6
-13.6
-26.2
-15
-14.0 2.400
2.425
2.450 FREQUENCY (GHz)
2.475
-27.0 2.500
T = 25C -20 2.400 2.425 2.450 FREQUENCY (GHz)
Vcc = 3V 2.475 2.500
SR01463
SR01465
Figure 8. LNA Loss Mode & S12 VS Frequency
Figure 10. LNA Input IP3 and P-1dB VS Frequency
1997 May 23
8
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
20 LNA LOSS MDOE INPUT IP3 AND P-1dB (dBm)
11.5 T = 25C 11.3
10.0
9.6 CONVERSION GAIN (dB)
15 P-1dB IP3 10 SSB NOISE FIGURE (dB)
11.1 NF GAIN 10.9
9.2
8.8
5
10.7
8.4
T = 25C 0 2 3 4 VOLTS (V) 5 6 10.5 2 3 4 VOLT (V) 5 6 8.0
SR01466
SR01468
Figure 11. LNA Loss Mode Input IP3 and P-1dB VS Voltage
Figure 13. Rx Mixer Conv. Gain & SSB NF VS Supply Voltage
11.8 VCC = 3V 11.4 11.0
9.8 9.4 INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
5
SSB NOISE FIGURE (dB)
CONVERSION GAIN (dB)
9.0
T = 25C 0
10.6
8.6
P-1dB IP3 -5
10.2
8.2
9.8 NF 9.4 9.0 -50 0 50 TEMPERATURE (C) 100 GAIN
7.8
7.4 7.0
-10 2 3 4 VOLTS (V) 5 6
SR01467
SR01469
Figure 12. Rx Mixer Conv. Gain & SSB NF VS Temperature
Figure 14. Rx Mixer Input IP3 and P-1dB VS Supply Voltage
1997 May 23
9
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
5 INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
22 GAIN POWER
12
0 CURRENT (mA)
20
6
P-1dB VCC = 3V T = 25C -5 IP3
18
0
VCC = 3V -10 2.400 2.425 2.450 FREQUENCY (GHz) 2.475 2.500 16 -50 0 50 TEMPERATURE (C) -6 100
SR01470
SR01472
Figure 15. Rx Mixer Output IP3 and P-1dB VS Frequency
Figure 17. Tx Mx conv. Gain and Output Pwr VS Temp.
10
0 LO
Rx MIXER CONVERSION GAIN (dB)
LO AND IMAGE SUPPRESSION (dbc)
IMAGE -6
5
-12
0 FULL (LO = 2.1 GHZ) DOUBLER (LO = 1.05 GHZ -5
-18
-24
-10 -30
-30 -24 -12 LO POWER (dBM) -18 -6 0
-30
-20
-10 LO POWER (dBM)
0
SR01471
SR01473
Figure 16. Rx Mixer Conversion Gain VS LO Power
Figure 18. Tx Mixer LO and Image Suppression
1997 May 23
10
SATURATED OUTPUT POWER (dB)
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
OUTPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
13.8
21.0
16 VCC = 3V
13.6 SSB NOISE FIGURE (dB) T = 25C 13.4
20.4 CONVERSION GAIN (dB)
10 P-1dB IP3
19.8
13.2 NF GAIN 13.0
19.2
4
18.6
12.8 2 3 4 VOLTS (V) 5 6
18.0
-2
-50
0
50 TEMPERATURE (C)
100
SR01474
SR01479
Figure 19. Tx Mixer Gain & NF VS Supply Voltage
Figure 21. Tx Mixer Output IP3 and P-1dB VS Temperature
15 T = 25C OUTPUT P-1dB AND IP3 (dBM) OUTPUT IP3 AND 1 DB GAIN COMPRESSION (dBm)
12
9 VCC = 3V T = 25C 6
10
P-1dB IP3 5
P-1dB IP3
3
0
2
3
4 VOLTS (V)
5
6
0 2.400
2.425
2.450 FREQUENCY (GHz)
2.475
2.500
SR01475
SR01480
Figure 20. Tx Mixer Output P-1dB and IP3 Vs Voltage
Figure 22. Tx Mixer Output IP3 and P-1dB VS Frequency
1997 May 23
11
C4 3.3pF C5 10pF 300 8 GND Tx IF IN Tx/Rx SW 17 7 Tx IF IN 18 GND 300 6 260 Rx IF OUT 19 RF I/O
145
1997 May 23
VCC C17 10uF + U1 C16 100nF V CC 24 200 C15 1.5pF LNA OUT C18 (not used) SW5 4 GND 20 GND 21 ATTEN SW VCC L4 100nH 1 GND C1 1.5pF LNA IN C2 1.5pF 3 GND 22 GND L1 47nH C3 10pF VCC 5 Rx IF OUT 2 LNA IN LNA OUT 23 L2 27nH 300 RF I/O C13 1.5pF SW4 C14 33pF
Philips Semiconductors
RxOUT (352 MHz)
Low voltage RF transceiver -- 2.45 GHz
Figure 23.
12
C6 100pF C7 10pF 9 LOP GND L3 33nH C8 10pF 300 16 10 SW1 V CC 11 LO SW GND 12 L0 C10 33pF LOM ENABLE 13 R1 50 W C9 33pF V CC LO 14 GND 15
TxIN (352 MHz)
SW3
C11 33pF
VCC C12 100nF
SA2420 2.45 GHz LOW VOLTAGE RF TRANSCEIVER
SW2
Product specification
SA2420
XXX: 10 MILS WIDE, XXX MILS LONG ON 31 MILS THICK OF NATURAL FR-4 SUBSTRATE
SR01481
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45 GHz
SA2420
SR01485
Figure 24. SA2420 RF Transciever
1997 May 23
13
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45GHz
SA2420
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
1997 May 23
14
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45GHz
SA2420
NOTES
1997 May 23
15
Philips Semiconductors
Product specification
Low voltage RF transceiver -- 2.45GHz
SA2420
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Date of release: 05-97 Document order number: 9397 750 03302
Philips Semiconductors
1997 May 23 16

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